FP210

Ordering number:EN4537 FP210 NPN Epitaxial Planar Silicon Transistor Driver Applications Features · Composite type with 2 transistors (PNP) contained in one package, facilitating high-density mounting. · The FP210 is formed with 2 chips being equivalent to the 2SB1123, placed in one package. Electrical Connection 1:Base (PNP TR) 2, 7:Collector (PNP TR) 3:Emitter Common 4, 6:Collector (PNP TR) 5:Base (PNP TR) (Top view) SANYO:PCP5 (Bottom view) Package Dimensions unit:mm 2097A [FP209] 1:Base (PNP TR) 2, 7:Collector (PNP TR) 3:Emitter Common 4, 6:Collector (PNP TR) 5:Base (PNP TR) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on ceramic board (250mm2×0.8mm) 1 unit Mounted on ceramic board (250mm ×0.8mm) 2 Conditions Ratings –60 –50 –6 –2 –4 –400 0.8 1.1 150 –55 to +150 Unit V V V A A mA W W ˚C ˚C Electrical Characteristics at Ta=25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=–50V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–100mA V...