FP105

Ordering number:EN4656 FP105 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features · Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting. · The FP105 is formed with 2 chips, one being equivalent to the 2SB1123 and the other the SB0505CP, placed in one package. Package Dimensions unit:mm 2088A [FP105] 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 50 55 500 5 –55 to +125 –55 to +125 V V mA A ˚C ˚C VCBO VCEO VEBO IC I CP IB PC Tj Mounted on ceramic board (250mm2×0.8mm) –60 –50 –6 –2 –4 –400 1.3 150 V V V A A mA W ˚C Symbol Conditions Ratings Unit Marking:105 Electrical Connection 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 ...