FP104

Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features · Composite type with 2devices (PNP transistor and Shottky barrier diode) contained in one package, facilitating high-density mounting. · The FP104 is formed with a chips, one being equivalent to the 2SA1729 and a chip being eqivalent to the SB05-05CP placed in one package. Package Dimensions unit:mm 2088A [FP104] 1:Base 2,4,6,7:Common (Collcector, Cathode) 3:Emitter 5:Anode SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 50 55 500 5 –55 to +125 –55 to +125 V V mA A ˚C ˚C VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on ceramic board (250mm2×0.8mm) –50 –40 –5 –1.5 –3 –300 1.3 150 –55 to +150 V V V A A mA W ˚C ˚C Symbol Conditions Ratings Unit Marking:202 Electrical Connection 1:Base 2,4,6,7:Common (Collcector, Cathode) 3:Emitter 5:Anode (Top view) Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-...