FP103

Ordering number:EN3962 FP103 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features · Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting. · The FP103 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB07-03C, placed in one package. Package Dimensions unit:mm 2088A [FP103] 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 30 35 700 5 –55 to +125 –55 to +125 V V mA A ˚C ˚C VCBO VCEO VEBO IC I CP IB PC Tj Mounted on ceramic board (250mm2×0.8mm) –30 –25 –6 –2 –5 –400 1.3 150 V V V A A mA W ˚C Symbol Conditions Ratings Unit Marking:103 Electrical Connection 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) (Top view) Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TO...