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FOD817C Dataheets PDF



Part Number FOD817C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
Datasheet FOD817C DatasheetFOD817C Datasheet (PDF)

FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers November 2015 FOD814 Series, FOD817 Series 4-Pin DIP Phototransistor Optocouplers Features • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory Approvals – UL1577, 5,000 VACRMS for 1 Minute – DIN EN/IEC60747-5-5 Applications FO.

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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers November 2015 FOD814 Series, FOD817 Series 4-Pin DIP Phototransistor Optocouplers Features • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory Approvals – UL1577, 5,000 VACRMS for 1 Minute – DIN EN/IEC60747-5-5 Applications FOD814 Series • AC Line Monitor • Unknown Polarity DC Sensor • Telephone Line Interface FOD817 Series • Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. Functional Block Diagram ANODE, CATHODE 1 CATHODE, ANODE 2 FOD814 4 COLLECTOR ANODE 1 3 EMITTER CATHODE 2 Figure 1. Schematic 4 COLLECTOR 3 EMITTER 4 FOD817 1 Figure 2. Package Outlines ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 2.8 www.fairchildsemi.com FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Climatic Classification Pollution Degree (DIN VDE 0110/1.89) Comparative Tracking Index < 150 VRMS < 300 VRMS Characteristics I–IV I–III 30/110/21 2 175 Symbol Parameter VPR VIORM VIOTM Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC Maximum Working Insulation Voltage Highest Allowable Over-Voltage External Creepage External Clearance External Clearance (for Option W, 0.4" Lead Spacing) DTI TS IS,INPUT PS,OUTPUT RIO Distance Through Insulation (Insulation Thickness) Case Temperature(1) Input Current(1) Output Power(1) Insulation Resistance at TS, VIO = 500 V(1) Note: 1. Safety limit values – maximum values allowed in the event of a failure. Value 1360 1560 850 8000 ≥7 ≥7 ≥ 10 ≥ 0.4 175 400 700 > 1011 Unit Vpeak Vpeak Vpeak Vpeak mm mm mm mm °C mA mW Ω ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 2.8 2 www.fairchildsemi.com FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified. Symbol Parameter Value FOD814 FOD817 Unit Total Device TSTG TOPR TJ TSOL θJC PTOT EMITTER Storage Temperature Operating Temperature Junction Temperature Lead Solder Temperature Junction-to-Case Thermal Resistance Total Device Power Dissipation -55 to +150 -55 to +105 -55 to +110 -55 to +125 260 for 10 seconds 210 200 °C °C °C °C °C/W mW IF Continuous Forward Current VR Reverse Voltage Power Dissipation PD Derate Above 100°C ±50 70 1.7 50 6 mA V mW mW/°C DETECTOR VCEO VECO IC PC Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Collector Power Dissipation Derate Above 90°C 70 V 6V 50 mA 150 mW 2.9 mW/°C ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 2.8 3 www.fairchildsemi.com FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers Electrical Characteristics TA = 25°C unless otherwise specified. Individual Component Characteristics Symbol Parameter Device EMITTER VF Forward Voltage FOD814 FOD817 IR Reverse Current Ct Terminal Capacitance FOD817 FOD814 FOD817 DETECTOR ICEO Collector Dark Current FOD814 FOD817 BVCEO Collector-Emitter Breakdown Voltage FOD814 FOD817 BVECO Emitter-Collector Breakdown Voltage FOD814 FOD817 Test Conditions IF = ±20 mA IF = 20 mA VR = 4.0 V V = 0, f = 1 kHz V = 0, f = 1 kHz VCE = 20 V, IF = 0 VCE = 20 V, IF = 0 IC = 0.1 mA, IF = 0 IC = 0.1 mA, IF = 0 IE = 10 µA, IF = 0 IE = 10 µA, IF = 0 Min. Typ. Max. Unit 1.2 1.4 V 1.2 1.4 10 µA 50 250 pF 30 250 100 nA 100 70 V 70 6 6V DC Transfer Characteristics Symbol Parameter CTR Curr.


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