Document
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
November 2015
FOD814 Series, FOD817 Series 4-Pin DIP Phototransistor Optocouplers
Features
• AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups:
FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160%
FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory Approvals – UL1577, 5,000 VACRMS for 1 Minute – DIN EN/IEC60747-5-5
Applications
FOD814 Series • AC Line Monitor • Unknown Polarity DC Sensor • Telephone Line Interface FOD817 Series • Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs
Description
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
Functional Block Diagram
ANODE, CATHODE 1 CATHODE, ANODE 2
FOD814
4 COLLECTOR
ANODE 1
3 EMITTER
CATHODE 2
Figure 1. Schematic
4 COLLECTOR
3 EMITTER
4
FOD817
1 Figure 2. Package Outlines
©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 2.8
www.fairchildsemi.com
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification Pollution Degree (DIN VDE 0110/1.89) Comparative Tracking Index
< 150 VRMS < 300 VRMS
Characteristics I–IV I–III
30/110/21 2
175
Symbol
Parameter
VPR
VIORM VIOTM
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
External Clearance
External Clearance (for Option W, 0.4" Lead Spacing)
DTI
TS IS,INPUT PS,OUTPUT
RIO
Distance Through Insulation (Insulation Thickness) Case Temperature(1) Input Current(1) Output Power(1) Insulation Resistance at TS, VIO = 500 V(1)
Note: 1. Safety limit values – maximum values allowed in the event of a failure.
Value
1360
1560
850 8000 ≥7 ≥7 ≥ 10 ≥ 0.4 175 400 700 > 1011
Unit
Vpeak
Vpeak
Vpeak Vpeak mm mm mm mm
°C mA mW Ω
©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 2.8
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www.fairchildsemi.com
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified.
Symbol
Parameter
Value
FOD814
FOD817
Unit
Total Device
TSTG TOPR
TJ TSOL θJC PTOT EMITTER
Storage Temperature Operating Temperature Junction Temperature Lead Solder Temperature Junction-to-Case Thermal Resistance Total Device Power Dissipation
-55 to +150
-55 to +105
-55 to +110
-55 to +125
260 for 10 seconds
210
200
°C °C °C °C °C/W mW
IF Continuous Forward Current VR Reverse Voltage
Power Dissipation PD Derate Above 100°C
±50
70 1.7
50 6
mA V mW mW/°C
DETECTOR
VCEO VECO
IC
PC
Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Collector Power Dissipation Derate Above 90°C
70 V 6V 50 mA 150 mW 2.9 mW/°C
©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 2.8
3
www.fairchildsemi.com
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Parameter
Device
EMITTER
VF Forward Voltage
FOD814 FOD817
IR Reverse Current Ct Terminal Capacitance
FOD817 FOD814 FOD817
DETECTOR
ICEO Collector Dark Current
FOD814 FOD817
BVCEO
Collector-Emitter Breakdown Voltage
FOD814 FOD817
BVECO
Emitter-Collector Breakdown Voltage
FOD814 FOD817
Test Conditions
IF = ±20 mA IF = 20 mA VR = 4.0 V V = 0, f = 1 kHz V = 0, f = 1 kHz
VCE = 20 V, IF = 0 VCE = 20 V, IF = 0 IC = 0.1 mA, IF = 0 IC = 0.1 mA, IF = 0 IE = 10 µA, IF = 0 IE = 10 µA, IF = 0
Min. Typ. Max. Unit
1.2 1.4 V
1.2 1.4 10 µA
50 250 pF
30 250
100 nA
100 70
V 70 6 6V
DC Transfer Characteristics
Symbol
Parameter
CTR Curr.