FMU-G26S

Fast-Recovery Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) With Heatsink Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per element Others IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) IR (µA) IF (A) VR = VRM IR (H) (µA) VR=VRM, Ta=100°C t rr Œ (µs) IF /IRP (mA) t rr  (µs) IF /IRP (mA) Rth ( j-c) (°C/ W) Mass Fig. (g) max per element max per element FMU-G16S FMU-G26S FMU-G2YXS 600 600 100 5.0 10.0 10.0 30 40 100 1.25 5.0 0.4 0.18 100/100 0.2 0.08 100/200 4.2 4.0 2.1 A –40 to +150 1.35 10.0 1.0 10.0 50 500 FMU-G16S Tc—IF(AV) Derating 5 Average Forward Current IF(AV) (A) VF —I F Characteristics (Typical) I FSM (A) I FMS Rating 30 I FSM (A) 20ms t /T = 1/2 t /T = 1/6 t /T= 1/ 3, Sinewave Forward Current IF (A) 50 10 4 D.C. Peak Forward Surge Current 3 1 20 2 0.1 1 0.01 Ta = 150ºC 100ºC 60ºC 25ºC 10 0 70 80 90 100 110 120 130 140 150 Case Temperature Tc (°C) 0.001 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Forward Voltage VF (V) 0 1 5 10 Overcurrent Cycles 50 FMU-G26S I FSM (A) Average Forward Current IF(AV) (A) D.C. 10 Forward Current IF (A) I FSM (A) 10 Tc—IF(AV) Derating VF —I F Characteristics (Typical) 50 40 I FMS Rating 8 t /T = 1/2 t /T = 1/6 20ms 6 1 Peak Forward Surge Current 30 20 4 t /T= 1/ 3, Sinewave 0.1 2 0.01 Ta = 150ºC 100ºC 60ºC 25ºC 10 0 70 80 90 100 110 120 130 140 150 Case Temperature Tc (°C) 0.001 0.1 0.3 0.5 0.7 0.9 1.1 1.3 Forward Voltag...