FMN-G12S

SANKEN ELECTRIC CO., LTD. 1. Scope The present specifications shall apply to Sanken silicon diode, FMN-G12S. 2. Outline Type Silicon Diode Structure Resin Molded Flammability: UL94V-0 (Equivalent) Applications Pulse Rectification，etc. FMN-G12S 030225 1／4 61426-01 SANKEN ELECTRIC CO., LTD. 3. Absolute maximum ratings No. Item 1 Transient Peak Reverse Voltage 2 Peak Reverse Voltage 3 Average Forward Current 4 Peak Surge Forward Current 5 I2t Limiting Value 6 Junction Temperature 7 Storage Temperature 8 Screwing Torque 9 Dielectric Strength Symbol Unit VRSM VRM IF(AV) IFSM I2t V V A A A2s Tj °C Tstg °C N･m kV Rating 200 200 5.0 100 50 -40~+150 -40~+150 0.59 A.C. 1.0 4. Electrical characteristics (Ta=25°C, unless otherwise specified) No. Item Symbol Unit Value 1 Forward Voltage Drop 2 Reverse Leakage Current 3 Reverse Leakage Current Under High Temperature VF IR H･IR V µA mA 0.92 max. 100 max. 10 max. 4 Reverse Recovery Time trr1 ns trr2 ns 100 max. 50 max. 5 Thermal Resistance Rth (j-c) °C/W 4.0 max. FMN-G12S Conditions 10msec. 10msec. half sinewave, one shot Junction and case (1min.) Conditions IF=5.0A VR=VRM VR=VRM，Ta=150°C IF=IRP=100mA 90% Recovery point IF=100mA, IRP=200mA 75% Recovery point Between Junction and case. 030225 2／4 61426-01 SANKEN ELECTRIC CO., LTD. 5. Characteristics FMN-G12S 6. Derating 030225 3／4 61426-01 SANKEN ELECTRIC CO., LTD. 7. Dimensions, Inner Structure and Marking 7-1 Dimensions Refer φ3.3 10.0 4.2 2...