FMMV105G

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 FMMV105G 2 1 PARTMARKING DETAILS FMMV105G – 4EZ 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Reverse current Series Inductance Diode Capacitance Temperature Coefficient SYMBOL V BR MIN. 30 TYP. MAX. UNIT V CONDITIONS. I R = 10 µ A V R = 28V f=250MHz IR LS T CC 3.0 280 10 nA nH ppm/ °C V R = 3V, f=1MHz TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER Diode Capacitance Capacitance Ratio Figure of MERIT SYMBOL Cd Cd / Cd Q MIN. 1.8 4.0 250 350 TYP. MAX. 2.8 6.0 UNIT pF CONDITIONS. V R = 25V, f=1MHz V R = 3V/25V, f=1MHz V R = 3V, f=50MHz Spice parameter data is available upon request for this device ...