FMMTL619

SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL720 L69 FMMTL619 C B SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE 100 50 5 1.25 2 200 500 -55 to +150 UNIT V V V A A mA mW °C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range FMMTL619 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 100 50 5 TYP. 210 70 8.5 10 10 10 24 60 100 195 1020 895 200 300 200 100 30 400 450 400 230 50 180 6 182 379 8 MHz pF ns ns 45 100 180 330 1100 1000 MAX. UNIT V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC=100µA IC=5mA* IE=100µA VCB=40V VEB=4V VCE=40V IC=100mA, IB=10mA* IC=250mA, IB=10mA* IC=500mA, IB=25mA* IC=1.25A, IB=125mA* IC=1.25A, IB=125mA* IC=1.25A, VCE=2V* IC=10mA, VCE=5V IC=200mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=1A, VCC=10V IB1=-IB2=10mA Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO Collector Cut-Off Current ICES Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage ...