FMMTL618

SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=140mΩ at 1.25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL718 L68 FMMTL618 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE 60 20 5 1.25 4 200 500 -55 to +150 UNIT V V V A A mA mW °C FMMTL618 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 60 20 5 TYP. 105 30 8.5 10 10 10 18 80 130 170 260 1000 850 200 300 250 200 100 50 400 440 400 300 190 100 195 9 72 388 12 MHz pF ns ns 35 160 200 280 350 1100 1000 MAX. UNIT V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=16V VEB=4V VCE=16V IC=100mA, IB=10mA* IC=500mA, IB=25mA* IC=1A, IB=100mA* IC=1.25A, IB=100mA* IC=2A, IB=200mA* IC=1.25A, IB=100mA* IC=1.25A, VCE=2V* IC=10mA, VCE=2V IC=200mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=3A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=1A, VCC=10V IB1=-IB2=10mA Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO VCE(sat) Collector Cut-Off Current ICES Collector-Emitter Saturation Voltage Base-Emitter ...