Document
SuperSOT SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996 FEATURES
FMMT717 FMMT718 FMMT720 FMMT722 FMMT723
*
* * * * *
625mW POWER DISSIPATION
C B E
IC CONT 2.5A IC Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ. Exhibits extremely low equivalent on-resistance; RCE(sat)
DEVICE TYPE FMMT717 FMMT718 FMMT720 FMMT722 FMMT723
COMPLEMENT FMMT617 FMMT618 FMMT619 FMMT624
PARTMARKING 717 718 720 722 723
RCE(sat) 72mΩ at 2.5A 97mΩ at 1.5A 163mΩ at 1.5A -
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C* Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg FMMT 717 -12 -12 -5 -10 -2.5 FMMT 718 -20 -20 -5 -6 -1.5 FMMT 720 -40 -40 -5 -4 -1.5 -500 625 -55 to +150 FMMT 722 -70 -70 -5 -3 -1.5 FMMT 723 -100 -100 -5 -2.5 -1 UNIT V V V A A mA mW °C
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices
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FMMT722 FMMT723
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL
FMMT722
MIN. -70 -70 TYP. -150 -125 -100 -100 -5 -100 -100 -100 -35 -135 -140 -175 -50 -200 -220 -260 -1.05 -1.0 300 300 250
FMMT723
TYP. -200 -160 -8.8 MAX.
MAX. MIN.
UNIT CONDITIONS. V V V nA nA nA nA nA mV mV mV mV mV mV V V IC =-100µA IC =-10mA* IE=-100µA VC B=-60V VC B=-80V VEB=-4V VC ES=-60V VC ES=-80V IC =-0.1A, IB=-10mA* IC =-0.5A, IB=-20mA* IC =-0.5A, IB=-50mA* IC =-1A, IB=-100mA* IC =-1A, IB=-150mA* IC =-1.5A, IB=-200mA* IC =-1A, IB=-150mA* IC =-1.5A, IB=-200mA* IC =-1A, VC E=-10V* IC =-1.5A, VC E=-5V* IC =-10mA, VC E=-5V* IC =-10mA, VC E=-10V* IC =-0.1A, VC E=-5V* IC =-0.1A, VC E=-10V* IC =-0.5A, VC E=-10V* IC =-1A, VC E=-5V* IC =-1A, VC E=-10V* IC =-1.5A, VC E=-5V* IC =-1.5A, VC E=-10V* IC =-3A, VC E=-5V* MHz IC =-50mA, VC E=-10V f=100MHz VC B=-10V, f=1MHz VC C =-50V, IC =-0.5A IB1 =IB2 =-50mA
Collector-Base V(BR) CBO Breakdown Voltage Collector-Emitter V(BR) CEO Breakdown Voltage Emitter-Base V(BR)EBO Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage IC BO IEBO IC ES VC E( sat)
-5
-8.8
-100 -100
-100 -50 -125 -210 -0.89 -0.71 -80 -200 -330 -1.0 -1.0
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE( sat) VBE(on) hFE 300 300 175 40
-0.94 -0.78 470 450 275 60 10
475 450 375 250 30
Transition Frequency
fT
150
200
150 20
200 13 50 760 20
Output Capacitance Cob o Turn-On Time Turn-Off Time t(on) t(off)
14 40
700
pF ns ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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FMMT7.