FMMT624

SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS ISSUE 3 - NOVEMBER 1995 FEATURES FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 * * * * * * 625mW POWER DISSIPATION IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ. Extremely Low Equivalent On Resistance; RCE(sat) C B E DEVICE TYPE FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 COMPLEMENT FMMT717 FMMT718 FMMT720 FMMT723 – PARTMARKING 617 618 619 624 625 RCE(sat) 50mΩ at 3A 50mΩ at 2A 75mΩ at 2A - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot FMMT FMMT FMMT FMMT FMMT 617 618 619 624 625 15 15 5 12 3 20 20 5 6 2.5 50 50 5 6 2 500 625 -55 to +150 125 125 5 3 1 150 150 5 3 1 UNIT V V V A A mA mW °C Operating and Storage Temperature Tj:Tstg Range * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices 3 - 149 FMMT624 FMMT625 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector ...