FMMT620
SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A
DESCRIPTION Enhanci...
FMMT620
SuperSOT™ 80V
NPN SILICON LOW SATURATION
TRANSISTOR
SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A
DESCRIPTION Enhancing the existing SuperSOT range this 80V
NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very low sat performance ensuring low on state losses. FEATURES Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 3.0A IC=1.5A Continuous Collector Current SOT23 package
SOT23
APPLICATIONS DC - DC Modules Power Management Functions CCFL Backlighting Inverters Motor control and drive functions
E C B
TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units
Top View
ORDERING INFORMATION DEVICE FMMT620TA
FMMT620TC
REEL SIZE (inches) 7 13
DEVICE MARKING 620
ISSUE 1 - JANUARY 2001 1
FMMT620
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 80 80 5 5 1.5 500 625 5 806 6.4 -55 to +150 UNIT V V V A A mA mW mW/°C mW mW/°C °C
PD
T j :T stg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 200 155 UNIT °C/W °C/W
NOTES (a) For a device surfa...