FMMT597

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 COMPLEMENTARY TYPE FMMT497 PARTMARKING DETAIL - 597 FMMT597 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Emitter Saturation Voltages SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -300 -300 -5 -1 -0.2 -200 500 -55 to +150 MAX. UNIT CONDITIONS. V V V -100 -100 -100 -0.25 -0.25 -1.0 -0.85 100 100 100 75 10 300 nA nA nA V V V V IC=-100µ A IC=-10mA* IE=-100µ A VCB=-250V VEB=-4V VCES=-250V IC=-50mA, IB=-5mA IC=-100mA, IB=-20mA* IC=-100mA, IB=-20mA* IC=-100mA,VCE=-10V* IC=-1mA, VCE=-10V IC=-50mA,VCE=-10V* IC=-100mA,VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz UNIT V V V A A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance VBE(on) hFE fT Cobo -300 -300 -5 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 145 FMMT597 TYPICAL CHARACTERIS...