FMMT551

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current FMMT551 C E COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT451 551 B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage SYMBOL V(BR)CBO VCEO(sus) MIN. -80 -60 -5 -0.1 -0.1 -0.35 -1.1 50 10 150 25 150 MHz pF MAX. SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg UNIT V V V µA µA VALUE -80 -60 -5 -2 -1 -200 500 -55 to +200 CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-60V VEB=-4V UNIT V V V A A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance ICBO IEBO VCE(sat) VBE(sat) hFE fT Cobo V V IC=-150mA, IB=-15mA* IC=-150mA, IB=-15mA* IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 129 FMMT551 TYPICAL CHARACTERISTICS 100 - Normalised Gain (%) -0.1 -1 -10 -0.8 80 - (Volts) -0.6 60...