FMMT449

FMMT449 FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage TA = 25°C unless otherwise noted FMMT449 30 50 5 1 2 -55 to +150 Units V V V A °C Collector Current - Continuous - Peak Pulse Current Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic FMMT449 PD RθJA Total Device Dissipation* Derate above 25°C Thermal Resistance, Junction to Ambient 500 4 250 mW mW/°C °C/W Units *Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper. © 1998Fairchild Semiconducto Corporation Page 1 of 2 fmmt449.lwpPrNB revA FMMT449 NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdow...