FMMT4401-1L

SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 4 – FEBRUARY 1997 7 FMMT4400 FMMT4401 C B E PARTMARKING DETAILS: FMMT4400 - 1KZ FMMT4401 - 1L ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range FMMT4400 MIN. 40 60 6 0.1 0.1 20 40 50 20 20 40 80 100 40 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg FMMT4401 MIN. 40 60 6 0.1 0.1 VALUE 60 40 6 600 330 -55 to +150 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Current Collector-Emitter Cut-Off Current Base Cut-Off Current Static Forward Current TransferRatio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Input Capacitance SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBEX hFE MAX. MAX. UNIT CONDITIONS V V V IC=1mA, IB=0 IC=0.1mA, IE=0 IE=0.1mA, IC=0 VEB(off) =0.4V VEB(off) =3V µA VCE=35V µA VCE=35V 150 0.4 0.75 300 0.4 0.75 V V V V IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* IC=150mA,IB=15mA* IC=500mA,IB=50mA* IC=150mA,IB=15mA* IC=500mA,IB=50mA* VCE(sat) VBE(sat) fT Cobo Cibo 0.75 200 0.95 1.2 0.75 250 0.95 1.2 MHz IC=20mA,VCE=10V f=100kHz 6.5 30 pF VCB=5 V,IE=0 f=100kHz pF VBE=0.5V, IC=0 f=100kHz 6.5 30 *Measured under pulsed ...