SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS
ISSUE 4 FEBRUARY 1997 7
FMMT4400 FMMT4401
C B E
PARTMARKING DET...
SOT23
NPN SILICON PLANAR GENERAL PURPOSE
TRANSISTORS
ISSUE 4 FEBRUARY 1997 7
FMMT4400 FMMT4401
C B E
PARTMARKING DETAILS:
FMMT4400 - 1KZ FMMT4401 - 1L
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range FMMT4400 MIN. 40 60 6 0.1 0.1 20 40 50 20 20 40 80 100 40 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg FMMT4401 MIN. 40 60 6 0.1 0.1 VALUE 60 40 6 600 330 -55 to +150 UNIT V V V mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Current Collector-Emitter Cut-Off Current Base Cut-Off Current Static Forward Current TransferRatio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Input Capacitance SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBEX hFE MAX. MAX. UNIT CONDITIONS V V V IC=1mA, IB=0 IC=0.1mA, IE=0 IE=0.1mA, IC=0 VEB(off) =0.4V VEB(off) =3V
µA VCE=35V µA VCE=35V
150 0.4 0.75
300 0.4 0.75 V V V V
IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* IC=150mA,IB=15mA* IC=500mA,IB=50mA* IC=150mA,IB=15mA* IC=500mA,IB=50mA*
VCE(sat) VBE(sat) fT Cobo Cibo 0.75 200
0.95 1.2
0.75 250
0.95 1.2
MHz IC=20mA,VCE=10V f=100kHz 6.5 30 pF VCB=5 V,IE=0 f=100kHz pF VBE=0.5V, IC=0 f=100kHz
6.5 30
*Measured under pulsed ...