FMMT2369

SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ISSUE 3 – AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low current switching applications PARTMARKING DETAILS FMMT2369 - 1J FMMT2369R - 9R FMMTA2369A - P5 FMMTA2369AR - 9A FMMT2369 FMMT2369A C B SOT23 E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL SYMBOL VCBO VCES VCEO VEBO IC Ptot Tj:Tstg VALUE 40 40 15 4.5 200 330 -55 to +150 UNIT V V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Collector-Base V(BR)CBO Breakdown Voltage Collector-Emitter V(BR)CEO Breakdown Voltage V (BR)CES Emitter-Base V(BR)EBO Breakdown Voltage Collector Cut-Off ICBO Current Collector-Emitter VCE(sat) Saturation Voltage Base-Emitter VBE(sat) Saturation Voltage hFE Static Forward Current Transfer Ratio Output Capacitance Cobo Turn-on Time ton Turn-off Time Storage Time toff ts FMMT2369 FMMT2369A UNIT CONDITIONS. MIN. MAX. MIN. MAX. 40 40 V IC=10µA, IE=0 15 40 4.5 400 0.25 0.7 40 20 20 4 12 18 13 0.85 120 0.7 40 20 4 12 18 13 pF ns ns ns 15 40 4.5 25 0.20 0.85 120 V V V nA V V IC=10mA, IB=0* IC=10µA, VBE=0 IE=10µA, IC=0 VCB=20V, IE=0 IC=10mA, IB=1mA* IC=10mA, IB=1mA* IC=10mA, VCE=1V* IC=10mA, VCE=1V, Tamb=-55°C* IC=100mA, VCE=1V* IC=100mA, VCE=2V* VCB=5V, IE=0, f=140KHz VCC=3V, VB...