FMKA140

FMKA140 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a power surface mount package in applications where size and weight are critical. Features: Compact surface mount package with J-bend leads (SMA). 1.2 Watt Power Dissipation package. 1.0 Ampere, forward voltage less than 600 mv Ordering: 13 inch reel (330 mm); 12 mm Tape; 5,000 units per reel. Absolute Maximum Ratings* Parameter Storage Temperature Maximum Junction Temperature TA = 25OC unless otherwise noted Value -65 to +150 -65 to +125 40 1.0 30 9.6 Units O O C C Repetitive Peak Reverse Voltage (VRRM) Average Rectified Forward Current (TL = 120OC) Surge Non Repetitive Forward Current (Half wave, single phase, 60 Hz) Junction to Case for Thermal Resistance (RØJL) V A A O C/W *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired SMA Package (DO-214AC) Top Mark: A140 1 2 Electrical Characteristics SYM IR VF TA = 25OC unless otherwise noted Actual Size CHARACTERISTICS Reverse Leakage Current PW 300 us, <2% Duty Cycle Forward Voltage PW 300 us, <2% Duty Cycle MIN MAX 1.0 10 600 UNITS mA mA mV TEST CONDITIONS VR = 40 V; Tj = 25OC VR = 40 V; Tj = 100OC IF = 1.0 A; Tj = 25OC © 1997 Fairchild Semiconductor...