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FMG2G75US120 Dataheets PDF



Part Number FMG2G75US120
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Molding Type Module
Datasheet FMG2G75US120 DatasheetFMG2G75US120 Datasheet (PDF)

FMG2G75US120 IGBT FMG2G75US120 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required. Features • • • • • • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 75A High Inpu.

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FMG2G75US120 IGBT FMG2G75US120 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required. Features • • • • • • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 75A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7PM-GA Application • • • • • AC & DC Motor Controls General Purpose Inverters Weldings Servo Controls UPS C1 E1/C2 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TSC TJ TSTG VISO Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminal Screw : M5 Mounting Screw : M5 @ TC = 100°C FMG2G75US120 1200 ± 20 75 150 75 150 445 10 -40 to +150 -40 to +125 2500 4.0 4.0 Units V V A A A A W us °C °C V N.m N.m @ AC 1minute Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A FMG2G75US120 Electrical Characteristics of IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----3 ± 100 V V/°C mA nA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC =75mA, VCE = VGE IC = 75A, VGE = 15V 5.0 -7.0 2.6 8.5 3.0 V V Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC =75A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C ------------10 ---75 80 295 50 6.9 4.3 80 80 310 70 8.4 5.6 -570 90 310 ---150 ------------ns ns ns ns mJ mJ ns ns ns ns mJ mJ us nC nC nC VCC = 600 V, IC = 75A, RG =10Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 600 V, VGE = 15V 100°C @ TC = VCE = 300 V, IC =75A, VGE = 15V Electrical Characteristics of DIODE Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery T.


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