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FMG2G50US60 Dataheets PDF



Part Number FMG2G50US60
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Molding Type Module
Datasheet FMG2G50US60 DatasheetFMG2G50US60 Datasheet (PDF)

FMG2G50US60 September 2001 IGBT FMG2G50US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V H.

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FMG2G50US60 September 2001 IGBT FMG2G50US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 50A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-GA E1/C2 Application • • • • • AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS C1 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FMG2G50US60 600 ± 20 50 100 50 100 10 250 -40 to +150 -40 to +125 2500 2.0 2.0 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation FMG2G50US60 Rev. A FMG2G50US60 Electrical Characteristics of IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage VGE = 0V, IC = 50mA IC = 50A, VGE = 15V 5.0 -6.0 2.2 8.5 2.8 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3460 480 140 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---20 30 60 110 1.1 1.2 2.3 20 30 70 250 1.2 2.4 3.6 -145 28 65 ---200 -----------210 40 95 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 50A, VGE = 15V ©2001 Fairchild Semiconductor Corporation FMG2G50US60 Rev. A FMG2G50US60 Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 50A TC = 100°C TC = 25°C TC = 100°C IF = 50A di / dt = 100 A/us TC = 25°C TC = 100°C TC = 25°C TC = 100°C Min. --------- Typ. 1.9 1.8 90 130 5 7 225 455 Max. 2.8 -130 -6.5 -422 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.05 -Max. 0.5 1.0 -190 Units °C/W °C/W °C/W g ©2001 Fairchild Semiconductor Corporation FMG2G50US60 Rev. A FMG2G50US60 140 120 Common Emitter T C = 25℃ 20V 15V 140 120 12V Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ Collector Current, IC [A] Collector Current, I C [A] 8 100 80 60 40 20 0 100 80 60 40 20 0 0 2 4 6 VGE = 10V 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 60 Common Emitter V GE = 15V Collector - Emitter Voltage, VCE [V] VCC = 300V Load Current : peak of square wave 4 50 100A Load Current [A] 40 3 50A 2 IC = 30A 30 20 1 10 0 -50 0 50 100 150 0 Duty cycle : 50% TC = 100℃ Power Dissipation = 70W 1 10 100 1000 Case Temperature, T C [ ℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter TC = 25℃ 16 20 Common Emitter TC = 125 ℃ 16 Collector - Emitter Voltage, V CE .


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