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FMG2G150US60E Dataheets PDF



Part Number FMG2G150US60E
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Molding Type Module
Datasheet FMG2G150US60E DatasheetFMG2G150US60E Datasheet (PDF)

FMG2G150US60E IGBT FMG2G150US60E Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Sw.

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FMG2G150US60E IGBT FMG2G150US60E Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 150A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-GA E1/C2 Application • • • • • AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS C1 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M6 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FMG2G150US60E 600 ± 20 150 300 150 300 10 500 -40 to +150 -40 to +125 2500 2.0 2.5 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2002 Fairchild Semiconductor Corporation FMG2G150US60E Rev. A FMG2G150US60E Electrical Characteristics of IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage VGE = 0V, IC = 150mA IC = 150A, VGE = 15V 5.0 -6.0 2.2 8.5 2.8 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---12840 1400 354 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---40 70 90 110 1.6 4.8 6.4 40 80 100 300 2.0 8.0 10.0 -620 120 270 ---200 -----------700 --ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC VCC = 300 V, IC = 150A, RG = 2.0Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 150A, RG = 2.0Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 150A, VGE = 15V ©2002 Fairchild Semiconductor Corporation FMG2G150US60E Rev. A FMG2G150US60E Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 150A TC = 100°C TC = 25°C TC = 100°C IF = 150A di / dt = 300 A/us TC = 25°C TC = 100°C TC = 25°C TC = 100°C Min. --------- Typ. 1.9 1.8 90 130 15 22 675 1430 Max. 2.8 -130 -20 -1270 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.03 -Max. 0.20 0.47 -270 Units °C/W °C/W °C/W g ©2002 Fairchild Semiconductor Corporation FMG2G150US60E Rev. A FMG2G150US60E 320 280 240 200 160 120 80 Common Emitter T C = 25℃ 300 20V 15V 12V 250 VGE = 10V Common Emitter VGE = 15V TC = 25℃ TC = 125℃ Collector Current, IC [A] Collector Current, I C [A] 200 150 100 50 40 0 0 2 4 6 8 0 0.3 1 10 20 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 180 Common Emitter V GE = 15V 160 300A 140 V CC = 300V Load Current : peak of square wave Collector - Emitter Voltage, V [V] CE 4 Load Current [A] 120 100 80 60 40 20 Duty cycle : 50% T C = 100℃ Power Dissipation = 200W 0.1 1 10 100 1000 3 150A 2 IC = 80A 1 0 0 30 60 90 120 150 0 Case Temperature, TC [℃ ] Frequency [Khz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter TC = 25 ℃ 20 Common Emitter TC = 125℃ Colle.


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