M25P10

M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA s s s s s s s s s s s s s 1 Mbit PAGED Flash Memory 128 BYTE PAGE PROGRAM IN 3 ms TYPICAL 256 Kbit SECTOR ERASE IN 1 s TYPICAL BULK ERASE IN 2 s TYPICAL SINGLE 2.7 V to 3.6 V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE 20 MHz CLOCK RATE AVAILABLE SUPPORTS POSITIVE CLOCK SPI MODES DEEP POWER DOWN MODE (1 µA TYPICAL) ELECTRONIC SIGNATURE 10,000 ERASE/PROG CYCLES PER SECTOR 20 YEARS DATA RETENTION –40 TO 85°C TEMPERATURE RANGE 8 1 SO8 (MN) 150 mil width 8 1 SO8 (MW) 200 mil width DESCRIPTION The M25P10 is an 1 Mbit Paged Flash Memory fabricated with STMicroelectronics High Endurance CMOS technology. The memory is accessed by a simple SPI bus compatible serial interface. The bus signals are a serial clock input (C), a serial data input (D) and a serial data output (Q). The device connected to the bus is selected when the chip select input (S) goes low. Data is clocked in during the low to high transition of clock C, data Figure 1. Logic Diagram VCC Table 1. Signal Names C D Q Serial Clock Serial Data Input Serial Data Output Chip Select D C S W HOLD M25P10 Q S W HOLD VCC VSS Write Protect Hold Supply Voltage Ground VSS AI03744 June 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/21 M25P10 Figure 2. SO Connections Chip Select (S) When S is high, the memory is desele...