16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM
M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCES...
Description
M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 1 42 44
s s
s s
FDIP42W (F)
SO44 (M)
s s s
PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE
42
– Manufacturer Code: 20h – Device Code: B1h DESCRIPTION The M27V160 is a low voltage 16 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage. It is organised as either 2 Mbit words of 8 bit or 1 Mbit words of 16 bit. The pin-out is compatible with a 16 Mbit Mask ROM. The M27V160 operates in the read mode with a supply voltage as low as 3V. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. The FDIP42W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written rapidly to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27V160 is offered in PDIP42 and SO44 packages.
1
PDIP42 (B)
Figure 1. Logic Diagram
VCC
20 A0-A19 15
Q15A–1
Q0-Q14 E G BY...
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