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AVD004F

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

AVD004F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG(B) DESCRIPTION: ØD A .100 X 45° .088 x 45° CHAMFER T...


Advanced Semiconductor

AVD004F

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Description
AVD004F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG(B) DESCRIPTION: ØD A .100 X 45° .088 x 45° CHAMFER The ASI AVD004F is Designed for C B FEATURES: Omnigold™ Metalization System E F G H J K I MAXIMUM RATINGS IC VCB PDISS TJ TSTG θ JC 650 mA PEAK 32 V 18 W PEAK DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07 .105 / 2.67 .255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24 -65 OC to +200 OC -65 OC to +150 OC 5.0 OC/W .003 / 0.08 .052 / 1.32 .120 / 3.05 .007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33 K ORDER CODE: ASI10554 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 1 mA IC = 5 mA IE = 1 mA VCE = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 1.0 UNITS V V V mA --Db % VCE = 5.0 V VCC = 28 V IC = 200 mA POUT = 4.0 W f = 1025 - 1150 MHz 30 9.0 35 300 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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