ATF36077

2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features PHEMT Technology Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz Low Parasitic Ceramic Microstrip Package Tape-and-Reel Packing Option Available Description Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. The premium sensitivity of the ATF-36077 makes this device the ideal choice for use in the first stage of extremely low noise cascades. ASSOCIATED GAIN (dB) 77 Package Pin Configuration 4 SOURCE Applications 12 GHz DBS LNB (Low Noise Block) 4 GHz TVRO LNB (Low Noise Block) Ultra-Sensitive Low Noise Amplifiers Note: 1. See Noise Parameter Table. 1 GATE 360 3 DRAIN 2 SOURCE 25 20 Ga 1.2 NOISE FIGURE (dB) 15 0.8 NF[1] 10 The repeatable performance and consistency make it appropriate for use in Ku-band Direct Broadcast Satellite (DBS) Television systems, C-band Television Receive Only (TVRO) LNAs, or other low noise amplifie...