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0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data
ATF-10736
Features
High Associated Gain: 13.0␣ dB Typical at 4␣ GHz Low Bias: VDS = 2 V, IDS = 25␣ mA High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz Cost Effective Ceramic Microstrip Package Tape-and-Reel Packa...
