EPA240D-SOT89

Excelics DATA SHEET Features LOW COST SURFACE-MOUNT PLASTIC PACKAGE +33dBm TYPICAL OUTPUT POWER 14.0dB TYPICAL POWER GAIN AT 2GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz +40dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY AND HIGH RELIABILITY EPA240D-SOT89 DC-6GHz High Efficiency Heterojunction Power FET   $ &#    6285&(    '5$,1 *$7(  Applications Analog and Digital Wireless System High Dynamic Range LNA HPA (Top View) All Dimensions In Mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE NF IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz Vds=8V, Ids=350mA Gain at 1dB Compression f = 2GHz Vds=8V, Ids=350mA Power Added Efficiency at 1dB Compression Vds=8V, Ids=350mA f = 2GHz Noise Figure f = 2GHz Vds=5V, Ids=150mA Vds=5V, Ids=350mA Output 3rd Order Intercept Point f = 2GHz Vds=5-8V, Ids=350mA Vds=5V, Ids=150mA Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=6mA -11 -7 MIN 31.5 12.0 TYP 33.0 14.0 55 0.4 0.8 40 38 720 760 -1.0 -15 -14 25* o MAX UNIT dBm dB % dB dBm 940 -2.5 mA mS V V V C/W 440 480 Drain Breakdown Voltage Igd=2.4mA Source Breakdown Voltage Igs=2.4mA Thermal Resistance * Overall Rth depends on case mounting. MAXIMUM RATINGS ...