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EMD3 Dataheets PDF



Part Number EMD3
Manufacturers Rohm
Logo Rohm
Description General purpose (dual digital transistors)
Datasheet EMD3 DatasheetEMD3 Datasheet (PDF)

EMD3 / UMD3N / IMD3A Transistors General purpose (dual digital transistors) EMD3 / UMD3N / IMD3A zFeatures 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. zExternal dimensions (Unit : mm) EMD3 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions ROHM : EMT6 A.

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EMD3 / UMD3N / IMD3A Transistors General purpose (dual digital transistors) EMD3 / UMD3N / IMD3A zFeatures 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. zExternal dimensions (Unit : mm) EMD3 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions ROHM : EMT6 Abbreviated symbol : D3 0.65 1.3 0.65 zStructure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type) (4) (3) UMD3N 0.2 0.5 0.5 0.5 1.0 1.6 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9 2.0 (5) (6) 1.25 2.1 0.15 0.1Min. 0to0.1 The following characteristics apply to both the DTr1 and DTr2, however, the “−” sign on DTr2 values for the PNP type have been omitted. Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : D3 IMD3A (6) zEquivalent circuits EMD3 / UMD3N (3) (2) (1) R1 R2 DTr1 R1=10kΩ R2=10kΩ DTr2 R2 R1 (4) (5) DTr2 R2 R1 (3) (2) 0.3 (4) (5) IMD3A 0.15 1.6 2.8 (4) (5) (6) R1 R2 DTr1 R1=10kΩ R2=10kΩ (1) 0.3to0.6 0to0.1 Each lead has same dimensions (6) ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : D3 zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Symbol VCC VIN IO IC (Max.) Pd Tj Tstg Limits 50 −10 40 Output current EMD3, UMD3N Power dissipation IMD3A Junction temperature Storage temperature 50 100 150 (TOTAL) 300 (TOTAL) 150 −55∼+150 ˚C ˚C Unit V V mA mW ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. (3) (2) (1) (1) (2) Rev.A 1/3 EMD3 / UMD3N / IMD3A Transistors zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT Min. − 3 − − − 30 − Typ. − − 0.1 − − − 250 Max. 0.5 − 0.3 0.88 0.5 − − Unit V V mA µA − MHz Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IE=−5mA, f=100MHz ∗ R1 R2/R1 7 0.8 10 1 13 1.2 kΩ − − − ∗ Transition frequency of the device zPackaging specifications Package Code Type Taping T2R 8000 TN 3000 T110 3000 Basic ordering unit (pieces) EMD3 UMD3N IMD3A zElectrical characteristic curves DTr1 (NPN) 100 50 VO=0.3V 10m 5m OUTPUT CURRENT : Io (A) VCC=5V 1k 500 DC CURRENT GAIN : GI VO=5V Ta=100˚C 25˚C −40˚C INPUT VOLTAGE : VI (on) (V) 20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=−40˚C 25˚C 100˚C 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100˚C 25˚C −40˚C 200 100 50 20 10 5 2 0.5 1 1.5 2 2.5 3 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltag.


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