EMB10 / UMB10N / IMB10A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Para...
EMB10 / UMB10N / IMB10A
PNP -100mA -50V Complex Digital
Transistors (Bias Resistor Built-in
Transistors) Datasheet
Parameter
VCC IC(MAX.)
R1 R2
Tr1 and Tr2
50V 100mA
2.2k 47k
Features 1) Built-In Biasing Resistors. 2) Two DTA123J chips in one package. 3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant.
Outline
EMT6
(6)
(5)
(1)
(4)
(2)
(3)
EMB10 (SC-107C)
SMT6
(4) (5) (6)
(3) (2) (1)
IMB10A SOT-457 (SC-74)
UMT6
(6) (5) (4)
(1) (2) (3)
UMB10N SOT-363 (SC-88)
Inner circuit
EMB10 / UMB10N
OUT
IN
(6)
(5)
GND (4)
IMB10A
OUT
IN
(4)
(5)
GND (6)
Application Inverter circuit, Interface circuit, Driver circuit
(1)
(2)
GND
IN
(3) OUT
(3)
(2)
GND
IN
(1) OUT
Packaging specifications
Part No.
Package
EMB10 UMB10N IMB10A
EMT6 UMT6 SMT6
Package size (mm)
1616
2021
2928
Taping code
T2R TN T110
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
180
8
8,000
180
8
3,000
180
8
3,000
Marking
B10 B10 B10
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1/7
2014.10 - Rev.E
EMB10 / UMB10N / IMB10A
Absolute maximum ratin...