ESM3045DV

ESM3045DV NPN DARLINGTON POWER MODULE s s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL s SMPS & UPS s DC/DC & DC/AC CONVERTERS s WELDING EQUIPMENT s ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VEBO IC ICM IB I BM Pt ot T stg Tj VI SO Parameter Collector-Emitter Voltage (VBE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current (t p = 10 ms) Tot al Dissipation at T c = 25 o C Storage Temperature Max. Ope rating Junction Temperature Insulation Withstand Voltage (AC-RMS) Value 600 450 7 24 36 2.5 5 125 -55 to 150 150 2500 Unit V V V A A A A W o o o VCEO(sus) Collector-Emitter Voltage (IB = 0) C C C 1/8 September 1997 ESM3045DV THERMAL DATA R thj-ca se R thj-ca se R t hc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied o Max Max Max 1 2 0.05 o o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol I CER # I CEV # I EBO # Parameter Collecto r Cut-of f Current (RBE = 5 Ω ) Collecto r Cut-of f Current (VBE = -5) Test Conditions VCE = VCEV VCE = VCEV VCE = VCEV VCE = VCEV T j = 100 o C T j = 100 o C Min. Typ. Max. 1. 5 17 1 12 1 450 1...