ESM3030DV

® ESM3030DV NPN DARLINGTON POWER MODULE s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS s ULTRAFAST FREEWHEELING DIODE s FULLY INSULATED PACKAGE (UL COMPLIANT) s EASY TO MOUNT s LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s DC/DC & DC/AC CONVERTERS s WELDING EQUIPMENT ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCEV Collector-Emitter Voltage (VBE = -5 V) VCEO(sus) Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current (tp = 10 ms) IB Base Current IBM Base Peak Current (tp = 10 ms) Ptot Total Dissipation at Tc = 25 oC Visol Insulation Withstand Voltage (RMS) from All Four Terminals to Exernal Heatsink Tstg Storage Temperature Tj Max. Operating Junction Temperature September 2003 Value 400 300 7 100 150 5 10 225 2500 -55 to 150 150 Unit V V V A A A A W V oC oC 1/8 ESM3030DV THERMAL DATA Rthj-case Rthj-case Rthc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max Max 0.55 1.2 0.05 oC/W oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICER # ICEV # Collector Cut-off Current (RBE = 5 Ω) Collector Cut-off Current (VBE = -5) VCE = VCEV VCE = VCEV VCE = VCEV VCE = VCEV Tj = 100 oC Tj = 100...