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ESM2030DV

STMicroelectronics

NPN DARLINGTON POWER MODULE

® ESM2030DV NPN DARLINGTON POWER MODULE s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION CASE s SPECIFIED...


STMicroelectronics

ESM2030DV

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® ESM2030DV NPN DARLINGTON POWER MODULE s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS s ULTRAFAST FREEWHEELING DIODE )s FULLY INSULATED PACKAGE t(s(UL COMPLIANT) cs EASY TO MOUNT us LOW INTERNAL PARASITIC INDUCTANCE rodINDUSTRIAL APPLICATIONS: Ps MOTOR CONTROL tes UPS - Obsoles DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector-Emitter Voltage (VBE = -5 V) 400 V VCEO(sus) Collector-Emitter Voltage (IB = 0) 300 V VEBO Emitter-Base Voltage (IC = 0) 7V IC Collector Current 67 A ICM Collector Peak Current (tp = 10 ms) 100 A IB Base Current 3A IBM Base Peak Current (tp = 10 ms) Ptot Total Dissipation at Tc = 25 oC 6A 150 W Visol Insulation Withstand Voltage (RMS) from All Four Terminals to Exernal Heatsink Tstg Storage Temperature Tj Max. Operating Junction Temperature 2500 -55 to 150 150 V oC oC September 2003 1/8 ESM2030DV THERMAL DATA Rthj-case Rthj-case Rthc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max Max 0.83 1.2 0.05 oC/W oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER # Collector Cut-off Current (RBE = 5 Ω) VCE = VCEV VCE = VCEV Tj = 100 oC 1.5 mA 16 mA ICEV # Collector Cut-o...




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