ES1D

ES1A - ES1D Discrete POWER & Signal Technologies ES1A - ES1D Features For surface mount applications. Glass passivated junction. Low profile package. Easy pick and place. Built-in strain relief. Superfast recovery times for high efficiency. 0.208 (5.283) 0.188 (4.775) 0.062 (1.575) 0.055 (1.397) 0.181 (4.597) 0.157 (3.988) 2 1 0.114 (2.896) 0.098 (2.489) SMA/DO-214AC COLOR BAND DENOTES CATHODE 0.096 (2.438) 0.078 (1.981) 1.0 Ampere Superfast Rectifiers Absolute Maximum Ratings* Symbol IO if(surge) PD RθJA RθJL Tstg TJ TA = 25°C unless otherwise noted 0.060 (1.524) 0.030 (0.762) 0.008 (0.203) 0.004 (0.102) 0.012 (0.305) 0.006 (0.152) Parameter Average Rectified Current @ TA = 120°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient** Thermal Resistance, Junction to Lead** Storage Temperature Range Operating Junction Temperature Value 1.0 Units A 30 1.47 11.76 85 35 -50 to +150 -50 to +150 A W mW/°C °C/W °C/W °C °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Parameter TA = 25°C unless otherwise noted Device 1A 1B 100 70 100 5.0 100 15 0.92 7.0 1C 150 105 150 1D 200 140 200 50 35 50 Units V V V µA µA nS V pF Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR...