MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
DESCRIPTION
FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio.
1
Unit:mm GND
8
FEATURES
Low voltage High gain High efficiency High power 3.5V 22.5B 50% 30.5dBm
2
7
3
6
4
5
APPLICATION
PDC0.8GHz
GND 10.0
0.8 2.0 6.0
1 RF INPUT 2 VD1 3 4 5 6
GND VD2
R...
