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F5E2 Dataheets PDF



Part Number F5E2
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description AlGaAs INFRARED EMITTING DIODE
Datasheet F5E2 DatasheetF5E2 Datasheet (PDF)

F5E1/2/3 AlGaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) DESCRIPTION The F5E series are 880nm LEDs in a wide angle, TO-46 package. 0.030 (0.76) NOM 0.155 (3.94) MAX FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched 1.00 (25.4) MIN SCHEMATIC ANODE (Connected To Case) CATHODE 3 ANODE (CASE) to the TO-18 series phototransistor • Hermetically sealed package 0.100 (2.54) 0.050 (1.27) • High irradiance level 1 0.040 (1.02) 0.0.

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F5E1/2/3 AlGaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) DESCRIPTION The F5E series are 880nm LEDs in a wide angle, TO-46 package. 0.030 (0.76) NOM 0.155 (3.94) MAX FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched 1.00 (25.4) MIN SCHEMATIC ANODE (Connected To Case) CATHODE 3 ANODE (CASE) to the TO-18 series phototransistor • Hermetically sealed package 0.100 (2.54) 0.050 (1.27) • High irradiance level 1 0.040 (1.02) 0.040 (1.02) 45° 1 3 Ø0.020 (0.51) 2X NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 ! steradians. ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 10µs; 100Hz) Forward Current (pw, 1µs; 200Hz) Reverse Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF IF IF VR PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 3 10 3 170 1.3 Unit °C °C °C °C mA A A V mW W ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) (All measurements made under pulse conditions) MIN TYP MAX UNITS SYMBOL Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power F5E1 (7) Total Power F5E2 (7) Total Power F5E3 (7) Rise Time 0-90% of output Fall Time 100-10% of output IF = 100 mA IF = 100 mA VR = 3 V IF = 100 mA IF = 100 mA IF = 100 mA "PE # VF IR PO PO PO tr tf — — — — 12.0 9.0 10.5 — — 880 ±40 — — — — — 1.5 1.5 — — 1.7 10 — — — — — nm Deg. V µA mW mW mW µs µs  2001 Fairchild Semiconductor Corporation DS300287 4/25/01 1 OF 3 www.fairchildsemi.com F5E1/2/3 AlGaAs INFRARED EMITTING DIODE Figure 1. Power Output vs. Input Current 10 PO, NORMALIZED POWER CURRENT 1.0 0.1 NORMALIZED TO I F = 100 mA TA = 25°C PULSED INPUTS P W = 80 µsec RR = 30 Hz 0.001 1 10 IF, INPUT CURRENT (mA) 100 1000 0.01 Figure 2. Power Output vs. Temperature 20 IF = 1 A PO, NORMALIZED POWER OUTPUT 10 8 6 4 2 I F = 100 mA 1 0.8 0.6 0.4 0.2 0.1 -25 NORMALIZED TO I F = 100 mA, TA = 25°C PW = 80 µsec, f = 30 Hz 3 4 Figure 3. Forward Voltage vs. Temperature PW = 80 µsec f = 30 Hz IF = 1 A VF, FORWARD VOLTAGE (V) 0.5 A 2 100 mA 10 mA 0 25 50 75 100 125 150 1 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 4. Typical Radiation Pattern 100 120 100 RELATIVE OUTPUT (%) F5E 60 80 60 40 20 Figure 5. Output vs. Wavelength PO, RELATIVE CURRENT (%) 80 TYPICAL SPECTRAL RESPONSE OF SLICON PHOTOSENSORS F5E 40 20 I F = 100 mA TA = 25°C 0 -80 -60 -40 -20 0 20 40 60 80 100 700 800 900 1000 θ - DISPLACEMENT FROM OPTICAL AXIS (DEGREES) λ - WAVE LENGTH (nm) www.fairchildsemi.com 2 OF 3 4/25/01 DS300287 F5E1/2/3 AlGaAs INFRARED EMITTING DIODE DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS300287 4/25/01 3 OF 3 www.fairchildsemi.com .


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