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FFAF30U20DN

Fairchild Semiconductor

Ultrafast Recovery Power Rectifier

FFAF30U20DN FFAF30U20DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switc...


Fairchild Semiconductor

FFAF30U20DN

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Description
FFAF30U20DN FFAF30U20DN Features Ultrafast with soft recovery Low forward voltage Applications Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-3PF 1 2 3 1. Anode 2.Cathode 3. Anode Ultrafast Recovery Power Rectifier Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM TJ, TSTG (per diode) TC=25°C unless otherwise noted Value 200 @ TC = 100°C 30 300 - 65 to +150 Units V A A °C Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) TC=25 °C unless otherwise noted Min. TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C 0.5 Typ. Max. 1.2 1.0 µA 30 300 40 4.0 80 ns A nC mJ Units V Value 1.6 Units °C/W Electrical Characteristics Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 30A IF = 30A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =30A, di/dt = 200A/µs) Avalanche Energy IRM * trr Irr Qrr WAVL * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FFAF30U20DN Typical Characteristics 80 1000 Forward Current , IF [A] TC = 100 C 10 o Reverse Current , I R [µA] 100 TC = 100 C o 10 o TC = 25 C o 1 TC = 25 C 1 0.1 0...




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