FDZ7064S

FDZ7064S May 2004 FDZ7064S   30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON). Features 13.5 A, 30 V. RDS(ON) = 7 mΩ @ VGS = 10 V RDS(ON) = 9 mΩ @ VGS = 4.5 V Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 Ultra-thin package: less than 0.8 mm height when mounted to PCB 3.5 x 4 mm2 Footprint High power and current handling capability. D Applications DC/DC converters D D D D D S S S G D S S S S D S S S S D S S S S D D D D D Pin 1 F7064S G Pin 1 D S Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 30 ±16 13.5 60 2.2 –55 to +150 Units V V A W °C Thermal Characteristics R ¡£¢ ¤ R ¡£¢ ¥ R ¡£¢ ¦ Thermal Resistance, Junction-to...