FDZ299P

FDZ299P February 2004 FDZ299P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features –4.6 A, –20 V RDS(ON) = 55 mΩ @ VGS = –4.5 V RDS(ON) = 80 mΩ @ VGS = –2.5 V Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 Ultra-thin package: less than 0.80 mm height when mounted to PCB Outstanding thermal transfer characteristics: 4 times better than SSOT-6 Ultra-low Qg x RDS(ON) figure-of-merit High power and current handling capability. Applications Battery management Load switch Battery protection S B G Bottom Top TA=25oC unless otherwise noted D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –20 ±12 (Note 1a) Units V V A W °C –4.6 –10 1.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 72 °C/W Package Marking and Ordering Information Device Marking B Device FDZ299P Reel...