FDZ206P

FDZ206P January 2003 FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET   General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features –13 A, –20 V. RDS(ON) = 9.5 mΩ @ VGS = –4.5 V RDS(ON) = 14.5 mΩ @ VGS = –2.5 V Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 Ultra-thin package: less than 0.80 mm height when mounted to PCB 0.65 mm ball pitch 3.5 x 4 mm2 footprint High power and current handling capability Applications Battery management Load switch Battery protection D D D D D S S S G D S S S S D S S S S D S S S S D D D D D Pin 1 S F206P G Pin 1 D D Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings –20 ±12 –13 –60 2.2 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (...