FDZ202P

FDZ202P November 1999 ADVANCE INFORMATION FDZ202P P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features = –5.5 A, –20 V. RDS(ON) = 0.045 Ω=@ VGS = –4.5 V RDS(ON) = 0.075 Ω @ VGS = –2.5 V. = Occupies only 5 mm2 of PCB area. Only 55% of the area of SSOT-6 = Ultra-thin package: less than 0.70 mm height when mounted to PCB = Outstanding thermal transfer characteristics: 4 times better than SSOT-6 = Ultra-low Qg x RDS(ON) figure-of-merit. = High power and current handling capability. Applications = Battery management = Load switch = Battery protection D S G D S S D D S S D Pin 1 S F202 G Pin 1 D Bottom Top TA=25oC unless otherwise noted D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings –20 ±12 –5.5 –20 2.7 -55 to +175 Units V V A W °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-...