Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW9926NZ
March 2004
FDW9926NZ
Common Drain N-Channel 2.5V specified PowerTrench® MOSFET
General Description
This N-Ch...
Description
FDW9926NZ
March 2004
FDW9926NZ
Common Drain N-Channel 2.5V specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
Features
4.5 A, 20 V. RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V Low profile TSSOP-8 package
Applications
Battery protection Load switch Power management
G2 S2 S2 D2 G1 S1 S1 D1
Pin 1
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Total Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W °C
4.5 30 1.0 0.6 –55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
125 208
°C/W
Package Marking and Ordering Information
Device Marking 9926NZ
©2004 Fairchild Semiconductor Corporation
Device FDW9926NZ
Reel Size 13’’
Tape width 12mm
Quantity 2500 units
FDW9926NZ Rev. C(W)
FDW9926NZ
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temper...
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