FDW2507N

FDW2507N March 2003 FDW2507N Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. Features 7.5 A, 20 V. RDS(ON) = 19 mΩ @ VGS = 4.5 V RDS(ON) = 23 mΩ @ VGS = 2.5 V Isolated source and drain pins High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V Low profile TSSOP-8 package Applications Li-Ion Battery Pack D D D D G2 S2 G1 S1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 Units V V A W ±12 (Note 1a) 7.5 30 1.6 1.1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 77 114 °C/W °C/W Package Marking and Ordering Information Device Marking 2507N Device FDW2507N Reel Size 13’’ Tape width 12mm Quantity 3000 units 2003 Fairchild Semiconductor Corporation FDW2507N Rev C2 FDW2507N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter ...