FDW2503N

FDW2503N April 2000 PRELIMINARY FDW2503N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features 5.5 A, 20 V. RDS(ON) = 0.021 Ω @ VGS = 4.5 V RDS(ON) = 0.035 Ω @ VGS = 2.5 V Extended VGSS range (±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications Load switch Motor drive DC/DC conversion Power management G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 ±12 (Note 1a) Units V V A W °C 5.5 30 1.0 0.6 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 °C/W Package Marking and Ordering Information Device Marking 2503N 2000 Fairchild Semiconductor Corporation Device FDW2503N Reel Size 13’’ Tape width 12mm Quantity 3000 units FDW2503N Rev D (W) FDW2503N Electrical Characteristics Symbol BVDSS ∆BVDSS ===∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ===∆TJ RDS(on) TA = 25...