Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2502PZ
March 2000 PRELIMINARY
FDW2502PZ
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This ...
Description
FDW2502PZ
March 2000 PRELIMINARY
FDW2502PZ
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V).
Features
–4.4 A, –20 V. RDS(ON) = 0.035 Ω @ V GS = –4.5 V RDS(ON) = 0.057 Ω @ V GS = –2.5 V. Extended V GSS range (±12V) for battery applications. ESD protection diode (note 3). High performance trench technology for extremely low RDS(ON) . Low profile TSSOP-8 package.
Applications
Load switch Motor drive DC/DC conversion Power management
G2 S2 S2 D2 G1 S1 S1 D1
Pin 1
1 2 3 4
8 7 6 5
TSSOP-8
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
T A=25oC unless otherwise noted
Parameter
Ratings
–20 ±12
(Note 1a)
Units
V V A W °C
–4.4 –30 1.0 0.6 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
Rθ JA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
125 208
°C/W
Package Marking and Ordering Information
Device Marking 2502PZ
© 2000 Fairchild Semiconductor Corporation
Device FDW2502PZ
Reel Size 13’’
Tape width 12mm
Quantity 3000 units
FDW2502PZ Rev. B (W)
FDW2502PZ
Electrical Characteristics
Symbol
BV DSS ∆BV DSS...
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