FDW2502P

FDW2502P May 2000 PRELIMINARY FDW2502P Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V). Features –4.4 A, –20 V. RDS(ON) = 0.035 Ω @ VGS = –4.5 V RDS(ON) = 0.057 Ω @ VGS = –2.5 V. Extended VGSS range (±12V) for battery applications. High performance trench technology for extremely low RDS(ON) . Low profile TSSOP-8 package. Applications Load switch Motor drive DC/DC conversion Power management G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA =25 oC unless otherwise noted Parameter Ratings –20 ±12 (Note 1a) Units V V A W °C –4.4 –30 1.0 0.6 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJ A Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 °C/W Package Marking and Ordering Information Device Marking 2502P © 2000 Fairchild Semiconductor Corporation Device FDW2502P Reel Size 13’’ Tape width 12mm Quantity 3000 units FDW2502P Rev. C1 (W) FDW2502P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆ TJ IDSS IGSSF IGSSR T A = 25°C unless other...