DatasheetsPDF.com

FDV304P

Fairchild Semiconductor
Part Number FDV304P
Manufacturer Fairchild Semiconductor
Description Digital FET/ P-Channel
Published Mar 30, 2005
Detailed Description August 1997 FDV304P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistors...
Datasheet PDF File FDV304P PDF File

FDV304P
FDV304P


Overview
August 1997 FDV304P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance at low gate drive conditions.
This device is designed especially for application in battery power applications such as notebook computers and cellular phones.
This device has excellent on-state resistance even at gate drive voltages as low as 2.
5 volts.
Features -25 V, -0.
46 A continuous, -1.
5 A Peak.
RDS(ON) = 1.
1 Ω @ VGS = -4.
5 V RDS(ON) = 1.
5 Ω @ VGS= -2.
7 V.
Very low level gate drive requirements allowing direct oper...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)