FDT434P

FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V. Low gate charge (13nC typical) High performance trench technology for extremely low RDS(ON) . High power and current handling capability in a widely used surface mount package. Applications Low Dropout Regulator DC/DC converter Load switch Motor driving D D D D S D SOT-223 S G G D S SOT-223 * (J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings –20 ±8 (Note 1a) Units V V A W –6 –30 3 1.3 1.1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W °C/W Package Marking and Ordering Information Device Marking 434 Device FDT434P Reel Size 13’’ Tape width 12mm Quantity 2500 units 1999 Fairchild Semiconductor Corporation FDT434P Rev. C1 (W) FDT434P ...