FDS9926A

FDS9926A July 2003 FDS9926A Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Applications Battery protection Load switch Power management Features 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 43 mΩ @ VGS = 2.5 V. Optimized for use in battery protection circuits Low gate charge 5 4 6 Q1 3 7 2 Q2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS9926A FDS9926A 13’’ Ratings 20 ±10 6.5 20 2 1.6 1 0.9 –55 to +150 78 40 Tape width 12mm Units V A W °C °C/W Quantity 2500 units ©2003 Fairchild Semiconductor Corp. FDS9926A Rev E (W) FDS9926A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Vol...