FDS8958A
April 2008
FDS8958A
tm
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Chan...
FDS8958A
April 2008
FDS8958A
tm
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect
transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V
Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V
Fast switching speed High power and handling capability in a widely
used surface mount package
DD2DD2 DD1 DD1
SO-8
Pin 1 SO-8
G2
S2 G SS1GS1 S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
PD
EAS TJ, TSTG
Drain-Source Voltage Gate-Source Voltage
Drain Current - Continuous - Pulsed
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1c)
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8958A
FDS8958A
13”
Q2
5
4
6
3
Q1
7
2
8
1
Q1
Q2
3...